Abstract
The radiation fluence of high luminosity LHC (HL-LHC) is predicted up to 1 × 1016 1 MeV neq/cm2 in the ATLAS and CMS experiments for the pixel detectors at the innermost layers. The increased radiation leads to the degradation of the detector properties, such as increased leakage current and full depletion voltage, and reduced signals and charge collection efficiency, which means it is necessary to develop the radiation hard semiconductor devices for very high luminosity colliders. In our previous study about ultra-fast 3D-trench electrode silicon detectors, through induced transient current simulation with different minimum ionizing particle (MIP) hitting positions, the ultra-fast response times ranging from 30 ps to 140 ps were verified. In this work, the full depletion voltage, breakdown voltage, leakage current, capacitance, weighting field and MIP induced transient current (signal) of the detector after radiation at different fluences will be simulated and calculated with professional software, namely the finite-element Technology Computer-Aided Design (TCAD) software frameworks. From analysis of the simulation results, one can predict the performance of the detector in heavy radiation environment. The fabrication of pixel detectors will be carried out in CMOS process platform of IMECAS based on ultra-pure high resistivity (up to 104 ohm·cm) silicon material.
Highlights
The 3D electrode detector was developed by S
We verified the prediction through simulation and calculation of leakage current, induced current, capacitance, full depletion voltage, breakdown voltage and the weighting field distribution with different radiation fluences
The leakage current increases with the increasing of the electrode spacing and bias voltage due to fact that they are corresponding to the increase of depletion volume, and it is affected by the radiation fluence
Summary
The 3D electrode detector was developed by S. Micromachines 2021, 12, 1400 spacing of 3D electrode detector can be made on the order of 30 μm to 50 μm, which is close to the trapping distance of free carriers in silicon after high radiation fluence (near 1 × 1016 1 MeV neq /cm2 ) [26], the carrier trapping can be reduced significantly, resulting in the improvment of the charge collection efficient. Radiation damage models, such as the “Perugia Surface” damage modeling scheme [33,34] and the Hamburg Penta Trap Model (HPTM) [35], are proposed to implemented within the “optimiser” TCAD environment Those models provide the versatility and generality of the simulation methods.
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