Abstract
Oxynitrides on (100) silicon grown in a N2O ambient have been 60Co gamma irradiated. The conductance technique has been used to show that irradiation under bias can produce lateral charge nonuniformities at the Si:SiO2 interface. The ratio of induced fast to slow interface state density was found to be roughly independent of bias and nitridation, suggesting a common origin for these two types of defects.
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