Abstract
Results are presented of a study on the radiation damage and its recovery behavior resulting from thermal annealing of n-MOSFETs fabricated in a 0.8-μm single-well BiCMOS process, subjected to γ-rays, 1-MeV electrons and 1-MeV neutrons. After irradiation, the base (substrate) current and interface trap density normally increase with increasing fluence. This result points out that both ionization damage in the gate oxide and lattice defects in the p-well are induced by the irradiation. The interface trap density recovers by 85% for γ-ray irradiation with a fluence of 1×108 rad, after a 300 °C annealing.
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