Radial n–i–p structure silicon nanowire‐based solar cells on flexible stainless steel substrates

Abstract

AbstractRadial n–i–p structure silicon nanowires‐(SiNWs) based solar cells on flexible stainless steel substrates have been fabricated by plasma‐enhanced chemical vapor deposition (PECVD). The highest open‐circuit voltage (Voc) and short‐circuit current density (Jsc) for AM 1.5 illumination were 0.62 V and 13.36 mA cm−2, respectively, at a maximum power conversion efficiency of 3.56%. The optical reflectance of the SiNWs solar cells over a broad rang of wavelengths (300–1000 nm) is reduced by ∼80% in average compared to planar silicon thin film cells. The external quantum efficiency (EQE) measurements show that the EQE response of SiNWs solar cells is improved greatly in the wavelength range of 550–750 nm compared to corresponding planar silicon thin film solar cells.