Abstract
Radial InP/InAsP/InP heterostructure nanowires (NWs) on SiO2-mask-pattered Si substrates were reported using self-catalyzed InP NWs. Self-catalyzed growth was performed using low growth temperatures and high group-III flow rates, and vertical InP NWs were formed on the mask openings. The diameter and tapering of the self-catalyzed InP NWs were controlled by the introduction of HCl and H2S gases during the NW growth, and InP NWs that have a straight region with decreased diameter were formed. Radial InP/InAsP/InP quantum wells (QWs) were grown on the sidewall of the vertical InP NWs on Si substrates. Room-temperature photoluminescence of single NWs from the QW was clearly observed, which exhibited the potential of building blocks for vertical-type optical devices on Si substrates.
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