Abstract
The doping properties of Ga, In, and Tl-doped PbTe, ${\mathrm{Pb}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$${\mathrm{Sn}}_{\mathrm{x}}$Te, and ${\mathrm{PbSe}}_{0.08}$${\mathrm{Te}}_{0.92}$ liquid-phase epitaxial layers were systematically studied as a function of impurity concentration, tin mole fraction, and temperature. The dependence of carrier concentration on impurity concentration was fitted to a model which assumes two doubly degenerate states per impurity atom, using the band parameters of the host material calculated according to the six-band model. From this fit the impurity-state energy and its dependence on temperature and x were obtained. The Ga and In impurity states lie deep within the conduction band, while that of Tl lies deep within the valence band, which explains the strong donor behavior of Ga and In and strong acceptor behavior of Tl. The impurity-state energy decreases linearly with increasing x. The temperature dependence of the In state could explain the anomalous temperature dependence of ${R}_{H}$ observed for ${\mathrm{Pb}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$${\mathrm{Sn}}_{\mathrm{x}}$Te heavily doped with In.
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