Abstract
ABSTRACTThe Quantum-Confined Stark Effect in II-VI semiconductor coupled quantum wells is studied theoretically. It is found that because of the difference in localization of the wavefunctions of the heavy hole and the electron subbands involved, large band gap shifts can be induced by an external electric field for quantum wells with zero-field band gaps in the spectrum region from 0.4 µm to 12 µm. Several potential device applications based on this effect are proposed.
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