Abstract
Ballistic electron emission microscopy studies of the Au/Si(100) interface have been performed at temperatures below 77 K for the first time. Spectra below 10 K show collector charging due to the high semiconductor resistivity. Results above 10 K demonstrate unambiguously that both quantum-mechanical phase and amplitude effects are required to describe electron transmission across a metal-semiconductor interface. Furthermore, the ballistic (collisionless) model of electron transmission across this interface is shown to be valid for a wide energy range
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