Abstract
Strained SiGe/Si single quantum well structures were successfully grown by gas-source molecular beam epitaxy using disilane and germane. Quantum confined excitonic transitions of band-edge states dominated low-temperature photoluminescence (PL) spectra. The temperature dependence of PL intensity was in agreement with type-I quantum well formation. The quantum size effect was evidenced in these structures by the fact that the transition energy increased with decreasing well width.
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