Quantum scattering and its impact on the source–drain current with defect generation in the channel of nanoscale transistors

Abstract

The electrons scattered by the defects in the channel can be described by the time-dependent Schrodinger equation. An analytical and physical model of the time evolution of the source–drain current in a transistor at a given defect density has been proposed. It clearly shows that the source–drain current is composed of direct-current and a lot of alternating-current components. And thus the source–drain current will be sensitive to the defect density in the channel. Further, an analytical and physical relation between the phase shift of alternating-current components and the defect density in the channel is derived. Phase shift obtained from time-evolution experimental data of the source–drain current in aging process of nanoscale memory devices agrees well with the theoretical prediction.