Abstract
We study electronic transport within a lithographically defined silicon nanowire for zero and finite bias. The 10-nm wide and 500-nm long nanowire is fabricated by advanced electron-beam lithographic techniques. Transport experiments reveal clear quantum size effects in the conduction through the wire. Energy quantization within the wire leads to a shift in conduction threshold. Quantum interference effects cause an oscillatory pattern in the conductance. At low source-drain bias, transport is dominated by shallow tunneling barriers. At higher bias, additional nanowire modes are found to contribute to the conductance.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
