Abstract
We report on low-temperature hole transport in GaAs–Ge–GaAs lateral narrow junctions at 1.5 K. The Ge dot was selectively grown on a V-groove, which formed into a planar constriction of p-GaAs layer, using molecular beam epitaxy. The size of the Ge dot was approximately 0.5×0.5×0.1 μm 3. The current–voltage characteristics show a zero-bias anomaly and periodic current oscillations as a function of gate voltage. We thus consider that these properties originate from hole Coulomb blockade effects at the Ge dot, which has a unique confinement mechanism for holes.
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