Abstract
This paper analyzes the magnetoconductance and the manifestations of the different charge carrier species in the entire parameter space of transport channels in three dimensional topological insulators
Highlights
The quantum Hall effect (QHE) [1] and Shubnikov–de Haas (SdH) oscillations with zero resistance states [2] are hallmarks of two-dimensional electron (2DES) or hole (2DHS) systems, realized, e.g., in semiconductor heterostructures [3] or in graphene [4]
The Fermi level can be tuned from the valence band via the Dirac surface states into the conduction band and allows studying Landau quantization in situations where different species of charge carriers contribute to magnetotransport
In conventional two-dimensional systems one type of charge carrier, i.e., electrons or holes, prevails, giving rise to one Landau fan chart and a regular sequence of SdH peaks or quantum Hall plateaus, which occur in equidistant steps on an inverse magnetic field scale, 1/B
Summary
The quantum Hall effect (QHE) [1] and Shubnikov–de Haas (SdH) oscillations with zero resistance states [2] are hallmarks of two-dimensional electron (2DES) or hole (2DHS) systems, realized, e.g., in semiconductor heterostructures [3] or in graphene [4] These phenomena are closely connected to the discrete Landau level (LL) spectrum of charge carriers in quantizing magnetic fields. While SdH oscillations and the QHE have been observed in various TI materials [12,13,14,15,16,17], strained HgTe, a strong topological insulator [18], is insofar special, as it features unprecedented high mobilities μ with μB 1 at magnetic fields as low as 0.1 T This material serves as a model system to explore Landau quantization and magnetotransport in a situation where different types of charge carriers exist together. We show that the Fermi level can be tuned from the valence band into the conduction band, but we provide a comprehensive picture of Landau quantization and quantum Hall effect in the multicarrier system of a topological insulator
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