Abstract
Abstract Green light-emitting diodes light-emitting diodes with specially designed AlGaN electron blocking layer are numerically investigated. Examination of simulation results shows that applying proposed electron blocking layers, the injection of holes inside the active region can be improved. The improved performance for LEDs with specially designed AlGaN electron blocking layer is illustrated through the simulated results i.e. energy band diagrams, distribution of hole concentration and rate of radiative recombination inside the active region. The LEDs with graded AlGaN EBL have considerably enhanced light output power (LOP) and internal quantum efficiency.
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