Abstract
We demonstrate InAs/InGaAs quantum-dot surface emitting distributed feedback (SE-DFB) lasers, using an indium–tin-oxide layer as top cladding, which eliminates the regrowth process used in conventional DFB lasers to greatly simplify laser process. The lasing peak near 1.30 $\mu \text{m}$ realized using the grating period of 375 nm exhibited a 0.13-nm linewidth and a low-temperature red-shift rate of 0.1 nm/K. The laser had a threshold current density of 210 A/cm2 and a characteristic temperature of 94.6 K. The surface emitting laser light had the divergence angles of less than 1° and 8 $^{\circ }\sim 9^{\circ }$ along and perpendicular to the grating direction, respectively.
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