Quantum dot light emitting diodes using size-controlled ZnO NPs

Abstract

The particle size and trap energy level of ZnO were adjusted by varying the concentration of precursors using a sol–gel process, and the energy transport properties of the electron transport layer in quantum dot light-emitting diodes (QD-LEDs) were analyzed. Thus far, no study has considered the efficient electron transport properties of quantum dot light-emitting devices with respect to trap energy levels owing to the oxygen vacancies of ZnO. The particle size and trap energy levels of ZnO were analyzed based on optical properties such as photoluminescence and absorbance. The optimized device showed excellent performance, with a maximum luminance of 50,120 cd/m2, a high efficiency of 5.85 cd/A, and a threshold voltage of 2.5 V. The Y-ZnO (yellow photoluminescence ZnO)-based QD-LEDs not only enhanced the injection efficiency of electrons into the emitting layer but also confined the holes in the emitting layer due to the shallow trap level of Y-ZnO, in contrast to the deep trap levels of G-ZnO (green photoluminescence ZnO) and B-ZnO (blue photoluminescence ZnO). Here, we present the first attempt to analyze the electron transport behavior of the electron transport layer of the resulting device.