Abstract
In this paper, we will review the basic electronic and transport properties of quantum confined structures, discuss the ingredients for the simulation of quantum dot (QD) based electronic devices, and take a closer look at QD based non-volatile flash memories, which became one of the most promising technologies for ultra-dense memory applications, where the quantum tunneling of confined electrons in and out of QDs is the key mechanism for write/erase operations. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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