Abstract
We have quantitatively tested the theoretical model on the collapse of spin slitting in the quantum Hall effect regime proposed by Fogler and Shklovskii [Phys. Rev. B 52, 17366 (1995)] in a high-mobility two-dimensional electron system (2DES) realized in a heterojunction insulated-gate field-effect transistor. In the 2DES density range between $n$ $=$ 2 \ifmmode\times\else\texttimes\fi{} 10${}^{10}$ and 2 \ifmmode\times\else\texttimes\fi{} 10${}^{11}$ cm${}^{\ensuremath{-}2}$, the Landau level number $N$ displays a power-law dependence on the critical electron density ${n}_{\mathrm{c}}$ where the spin splitting collapses and $N$ $=$ 11.47 \ifmmode\times\else\texttimes\fi{} ${n}_{\mathrm{c}}$${}^{0.64\ifmmode\pm\else\textpm\fi{}0.01}$ (${n}_{\mathrm{c}}$ is in units of 10${}^{11}$ cm${}^{\ensuremath{-}2}$). This power-law dependence is in good agreement with the theoretical prediction in the low-density regime.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.