Abstract

We have quantitatively tested the theoretical model on the collapse of spin slitting in the quantum Hall effect regime proposed by Fogler and Shklovskii [Phys. Rev. B 52, 17366 (1995)] in a high-mobility two-dimensional electron system (2DES) realized in a heterojunction insulated-gate field-effect transistor. In the 2DES density range between $n$ $=$ 2 \ifmmode\times\else\texttimes\fi{} 10${}^{10}$ and 2 \ifmmode\times\else\texttimes\fi{} 10${}^{11}$ cm${}^{\ensuremath{-}2}$, the Landau level number $N$ displays a power-law dependence on the critical electron density ${n}_{\mathrm{c}}$ where the spin splitting collapses and $N$ $=$ 11.47 \ifmmode\times\else\texttimes\fi{} ${n}_{\mathrm{c}}$${}^{0.64\ifmmode\pm\else\textpm\fi{}0.01}$ (${n}_{\mathrm{c}}$ is in units of 10${}^{11}$ cm${}^{\ensuremath{-}2}$). This power-law dependence is in good agreement with the theoretical prediction in the low-density regime.

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