Abstract
The Wright etch [M. W. Jenkins, J. Electrochem. Soc. 124, 757 (1977)], hitherto used to reveal defects in silicon, has been examined as a defect etchant for GaAs epitaxial layers on silicon. Various calibration techniques, including transmission electron microscopy of etched epitaxial layers, have been used to establish that etch features correspond with dislocations. Problems involved in direct comparisons of defect densities measured by different methods are discussed.
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