Abstract
The dependence of single ion induced interface traps on the oxide electric field during irradiation has been investigated quantitatively by using single ion microprobe (SIMP) and single ion beam induced charge (SIBIC) imaging. The result shows that the number of interface traps induced by 2 MeV He ions increases with the dependence of the E 0.2 ox on the oxide electric field. The dependence of interface traps on the oxide field during ion irradiation has been found to be very similar to that of oxide trapped holes. The cause of the field dependence of interface traps has been discussed quantitatively.
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