Abstract
A method for quantitative analysis of Ti-Si-Ge/Si-Ge/Si structures with submicron thick layers by energy dispersive spectroscopy (EDS) in transmission electron microscopy (TEM) and Auger electron spectroscopy (AES) was developed. Quantitation of the results of both AES and EDS techniques was performed on the basis of a single reference specimen for the Ti-Si-Ge system comprising a uniform layer of the Ti(Si0.85Ge0.15)2 phase on a silicon substrate. The reference sample was prepared by the same procedure as the samples used in the study, and was thoroughly characterized by X-ray diffractometry, transmission electron microscopy and energy dispersive spectroscopy in scanning electron microscopy. Using this reference sample the elemental sensitivity factors relative to Si were found for both techniques, which enable us to obtain the elemental depth distributions for the studied samples. Good agreement between the results obtained by EDS/TEM, AES and supplementary techniques was found.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
