Abstract
AbstractThe sputter losses during growth of carbon nitride thin films using mass selected ion beam deposition of C+ and N+ ions with energies between 20 eV and 500 eV are studied. Depending on the ion energy 35 – 100 % of C+ but only 3 – 35 % of N+ ions are incorporated in the films. Thus the films are always strongly nitrogen-deficient. To suppress the preferential loss of nitrogen we introduce the concept of continuously growing surface protective layers. Starting from a diamond-like carbon film as substrate, carbon nitride films are deposited using 100 eV 12C+ and 1 keV 14N+ ions, so that the growing films are always covered with a 1–2 rm thick protective layer of amorphous carbon. In this case we observe an increased nitrogen incorporation yielding to films with average film composition of C2N.
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