Abstract

Quantification of Water Impurity in an Atomic Layer Deposition Reactor Using Group Contribution Method

Highlights

  • Ultra-thin films of various nanostructured materials are producible with Atomic Layer Deposition (ALD) for a wide range of applications from semiconductors to biomedical areas

  • A group contribution method based on Adsorbate Solid Solution Theory (ASST) is employed to theoretically estimate the number of moles of water in the abovementioned ALD reactor

  • In the given ALD condition [3], the water molecules act as co-reactant of the reaction throughout the initial cycles

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Summary

Introduction

Ultra-thin films of various nanostructured materials are producible with Atomic Layer Deposition (ALD) for a wide range of applications from semiconductors to biomedical areas. ALD is performed based on the chemisorption of a precursor material on the active sites of the substrate surface, which later reacts with the oxidizer/co-reactant. The thickness of the films produced by ALD is precisely controlled through cyclic, sequential, and self-limiting reactions [1]. Previous researchers have focused on describing different aspects of ALD through experiments and theory [2,3]. The ALD growth rate was modeled and related to the size of the reactant, chemisorption process, and process conditions such as temperature or precursor pulse time [3,4,5]. Adsorbate Solid Solution Theory (ASST) can be applied to incorporate the effects of functional groups through a group Contribution Method (GCM) and predict adsorption of a compound [6,7,8,9]

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