Abstract
Quantification of Water Impurity in an Atomic Layer Deposition Reactor Using Group Contribution Method
Highlights
Ultra-thin films of various nanostructured materials are producible with Atomic Layer Deposition (ALD) for a wide range of applications from semiconductors to biomedical areas
A group contribution method based on Adsorbate Solid Solution Theory (ASST) is employed to theoretically estimate the number of moles of water in the abovementioned ALD reactor
In the given ALD condition [3], the water molecules act as co-reactant of the reaction throughout the initial cycles
Summary
Ultra-thin films of various nanostructured materials are producible with Atomic Layer Deposition (ALD) for a wide range of applications from semiconductors to biomedical areas. ALD is performed based on the chemisorption of a precursor material on the active sites of the substrate surface, which later reacts with the oxidizer/co-reactant. The thickness of the films produced by ALD is precisely controlled through cyclic, sequential, and self-limiting reactions [1]. Previous researchers have focused on describing different aspects of ALD through experiments and theory [2,3]. The ALD growth rate was modeled and related to the size of the reactant, chemisorption process, and process conditions such as temperature or precursor pulse time [3,4,5]. Adsorbate Solid Solution Theory (ASST) can be applied to incorporate the effects of functional groups through a group Contribution Method (GCM) and predict adsorption of a compound [6,7,8,9]
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