Quantification of microstructural homogeneity in indium arsenide epilayers by X-ray diffraction

Abstract

In this article a complete procedure to investigate thin semiconductor plates (epitaxial layers), including high-resolution X-ray diffraction measurements, mathematical modelling of both crystalline structure and crystalline microstructure and computations to approximate solving inverse problems, is proposed and described in detail. The method is successfully applied to estimate crystalline homogeneity of a square indium-arsenide plate epitaxially-grown on gallium-arsenide substrate. To this end, the specimen is tested in nine areas around points forming a square grid. It is demonstrated that whole specimen may be regarded as a single large crystalline grain consisting of crystallites separated by small-angle boundaries. The crystallites occur as rode-like cuboids elongated in the direction perpendicular to the plate surface, with different areas of the sample and with base sizes not much differing. The mean-absolute second-order strain is very small and almost constant in the whole sample. The first-order strain also appears and, effectively, the structure of the crystalline layer is tetragonal with unit-cell parameters being smaller parallelly and larger perpendicularly to the layer surface and varying slightly in the layer. The results are presented in tables and figures and commented.