Abstract
Ti-doped GaZnO transparent conductive oxide films were deposited at various substrate temperatures by radio-frequency magnetron sputtering to examine the effects of crystalline quality on thin-film optoelectronic properties. The results show a low resistivity of 2.97×10−4Ω-cm and a high optical transmittance of 94.15% (wavelength region of 400–800nm) in 300-nm-thick Ti-doped GaZnO thin films grown at the substrate temperature of 300°C, with a post-annealing temperature of 400°C. To evaluate the performance of Ti-doped GaZnO transparent conductive oxide films, this study employed the figure of merit (ΦTC), expressed as ΦTC=T10/RS (T: transmittance RS: sheet resistance), and calculated as 55.2×10−3Ω−1, which is suitable for high-performance optoelectronic device applications.
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