Abstract
ABSTRACTIn zone melting recrystallization (ZMR) of thin silicon films different mechanisms can lead to thickness variations of the obtained silicon film. In this paper we will concentrate on some of these phenomena. One is the large scale mass transport, which typically leads to a thinned region at the start of the ZMR process. Another one, which is to a certain extent related to the first one, is the typical ripple formation that occurs especially under conditions that are commonly referred to as “low thermal gradient” regime.
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