Abstract
We report on the measurements of the pyroeffect in wurtzite n-type GaN films deposited over basal plane sapphire substrates. We measured the voltage drop between the contacts while the sample was subjected to the uniform heating or cooling. The pyroelectric voltage coefficient extracted from our data is comparable to that of the pyroelectric ceramics (∼104 V/m K). Our results show that the pyroelectric effect in GaN is a combination of a fast response to an initial heat flow and a slower response related to a change in the sample temperature.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
