Abstract
Computation of doping concentration in optical thyristor using plane wave expansion (PWE) method is reported in this paper. In this research, two types of optical thyristors such as InSb and GaSb are cogitated for investigation of doping concentration. Here concentration of InSb is studied at wavelength of 6.89μm and concentration of GaSb is investigated at wavelength of 1.7μm. Both absorption and reflection losses are considered to find out the doping concentration of InSb and GaSb optical thyristor. The absorption loss is computed using Maxwell's curl equation where reflection loss is investigated by employing plane wave expansion method. An interestingly, it is found that extinction coefficient of all optical thyristors are found zero at aforementioned wavelengths. Simulation results revealed that reflectance from such optical structures gradually decreases with respect to doping concentration. It is also revealed that the output intensity through same structures increases linearly with increasing doping concentration. Aside this, it is also observed that the variation of output intensity is an excellently fitted with linearship (R2=0.999 for InSb and R2=0.9914 for Gasb), which leads to an accurate investigation of doping concentration in both (InSb and GaSb) thyristors.
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