Abstract
AbstractDown‐conversion (DC) is a phenomenon that can enable the observation of photoluminescent quantum yield (PLQY) values exceeding 100%. A comprehensive study of the DC properties of BaF2–based single crystals with different Er3+ doping levels (1–25 mol.%) is presented. The samples exhibit a PLQY of 110% in the 1550–1650 nm under 405 nm excitation. This remarkable PLQY is attributed to a cross‐relaxation process within the energy levels of Er3+. Furthermore, when considering all emitted photons in the 1000–1650 nm range, the PLQY reaches 153% for a sample doped with 5 mol.% of Er3+. By integrating the emission of this single crystal with a Ge diode, serving as an example of a photovoltaic device sensitive to short‐wave infrared light, a significant enhancement in short‐circuit current is demonstrated. In a broader context, the presented material holds promise for improving the spectral response of low‐bandgap photovoltaic devices.
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