Abstract
We have successfully grown ultrathin continuous aluminum film by molecular beam epitaxy. This percolative aluminum film is single crystalline and strain free as characterized by transmission electron microscopy and atomic force microscopy. The weak anti-localization effect is observed in the temperature range of 1.4 to 10 K with this sample, and it reveals that, for the first time, the dephasing is purely caused by electron-electron inelastic scattering in aluminum.
Highlights
Weak localization (WL) is the quantum correction to the conductance which occurs in weakly disordered systems due to coherent backscattering of electrons
A wide variety of experimental results of weak antilocalization (WAL) were obtained in two-dimensional (2D) systems. 2D system is suitable for experimental study of WAL because of its stronger WAL contribution than three-dimensional (3D) ones and its easier sample fabrication than onedimensional (1D) ones
We have presented the structural and electrical characterization of the ultrathin percolating aluminum film grown by molecular beam epitaxy (MBE)
Summary
Weak localization (WL) is the quantum correction to the conductance which occurs in weakly disordered systems due to coherent backscattering of electrons (or holes). As a results of spin-orbit coupling, weak antilocalization (WAL) may be observed in a weakly disordered electron (or hole) system [1]. Ebisawa et al derived the relationship between the superconducting pair-breaking parameter δ and the inelastic scattering rate τi−1 by δ = (πħ/ 8kBT)τi−1 [8]. Their results have been used to study experiments of WAL in aluminum thin films [9,10,11]. Plenty of the theoretic works of WAL in twodimensional systems have been published in the past few decades, the experimental proof toward WAL in an ideal two-dimensional metallic system is still lacking. Note that all of our characterizations including structural and electrical assessments
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