Abstract
AbstractIn this paper we present an enhancement of punch‐through voltage in AlGaN/GaN high electron mobility transistor devices by increasing the electron confinement in the transistor channel using an AlGaN buffer layer structure. An optimized electron confinement results both, in a scaling of punch through voltage with device geometry and a significantly reduced subthreshold drain leakage current. These beneficial properties are pronounced even further if gate recess technology is applied for device fabrication. Physical‐based device simulations give insight in the respective electronic mechanisms. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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