Abstract
The current high level of interest in the growth of InP/InGaAsP/InGaAs lattice matched to InP, has influenced many researchers to consider the use of gas sources in growth by MBE. For gas flows greater than a few sccm, pumping speed requirements dictate the use of turbomolecular or diffusion pumps. GaAs samples with higher p-type mobilities than previously reported have been grown with a diffusion pumped molecular beam epitaxial system. This demonstration of the inherent cleanliness of a properly designed diffusion pumping system indicates that a diffusion pump is an excellent inexpensive and reliable choice for growth by molecular beam epitaxy and gas source molecular beam epitaxy/chemical beam epitaxy.© (1989) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
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