Abstract
Transient laser annealing of semiconductors is examined extensively and the rise in lattice temperature specifically attained in silicon under the influence of a high-power laser beam irradiation is characterized analytically over a wide range of laser wavelengths, intensities, and durations. For the case of silicon, with increasing lattice temperature the optical absorption coefficient is drastically enhanced, while the thermal conductivity is considerably reduced. These two temperature-dependent material parameters are, therefore, strongly coupled during the laser beam irradiation, and the effects of this coupling on the ensuing lattice-temperature rise are examined comprehensively. Specifically, the threshold pulse energy for the onset of surface melting is analytically calculated as a function of both material parameters and operating laser beam characteristics.
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