Abstract
In this work, ilmenite structure FeTiO3 thin films on α-Al2O3 (0001) substrates were prepared by Nd:YAG pulsed laser deposition. Different deposition conditions with different temperatures, and different partial gas pressures of different gases were used. It was found that an epitaxial and stoichiometric FeTiO3 single-crystal film can be prepared at 450°C in several different ambients, including pure argon, vacuum and Ar+5%O2 at different partial pressures respectively. However, the best film was ablated using 5% oxygen and argon gas mixed ambient of 0.01mbar at 450°C. With the temperature lower than 300°C or higher than 500°C, we could not obtain crystalline or even single-phase FeTiO3 film. X-ray diffraction and Rutherford backscattering spectrometry with channeling were used to characterize the films.
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