Abstract
Members of the family of ilmenite–hematite (1− x)FeTiO 3· xFe 2O 3 have been found to exhibit interesting semiconducting behavior over a wide range of temperatures. Low-voltage varistors were recently produced using ceramic specimens. The objective of this work was to grow and characterize epitaxial films of some members of the family that can be used for fabricating p–n junction devices. Epitaxial films of the (1− x)FeTiO 3· xFe 2O 3 series ( x=0, 0.10, 0.20, 0.27, 0.35, 0.45) were grown on (0001) sapphire substrates using pulsed laser deposition. The films are c-axis-oriented and exhibit good epitaxy.
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