Abstract
Crystalline ultrathin indium tin oxide (ITO) films were deposited on yttrium stabilized zirconia (YSZ) substrates by pulsed laser deposition. An X-ray rocking curve as narrow as 0.08° was obtained. The conductivity mechanism in these films was studied as a function of temperature down to 10 K. It was found that the temperature dependence of the conductivity was substantially different between thin (>10 nm) and ultrathin (<10 nm) films.
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