Abstract
The morphology of several dielectrics (a-SiO 2, CaF 2 and BaF 2) irradiated by laser light at a wavelength of 790 nm for different pulse widths (between 200 fs and 5 ps) and fluences near the single shot damage threshold has been investigated by using the complementary techniques of electron microscopy and atomic force microscopy. Differences can be observed which we relate to the mechanisms and dynamics of defect production in these wide band gap materials.
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