Abstract
ZnxSbyTez thin films are deposited on quartz or glass substrates by the electron beam evaporation technique in an ultra-high vacuum. A prototype phase change memory device using the ZST (ZnxSbyTez) thin film is fabricated. The current–voltage test results of the device show the threshold voltage of ZST531 (Zn5.18Sb3.75Te1.10 at.%) is 2.4 V, which is similar to that of the device based on pure Ge2Sb2Te5. It is shown that the phase-change device with the ZST film is able to perform several reading and writing cycles and the off/on resistance ratio is nearly 10 under pulse voltage. The switching performance of the device is also investigated. Most importantly, the results of the in situ resistance measurements show that the increase of crystallization temperature and the higher 10-year data retention temperature are as high as 300 °C and 191 °C, respectively. This indicates that the ZnxSbyTez material is quite stable, and thus appropriate for use in phase-change memory.
Highlights
As one of the most important phase-change materials, chalcogenides have received considerable attention for many years.[1,2] They are able to change from the amorphous state to the crystalline state
The binding energy of the ZST film was determined from the XPS spectra
The binding energy of Sb 3d is 527.4 eV, which corresponds to the energy level of Sb 3d in the ZST film.[18]. This suggests that the ZST film is deposited in our sample
Summary
As one of the most important phase-change materials, chalcogenides have received considerable attention for many years.[1,2] They are able to change from the amorphous state to the crystalline state. The resistance is low in the crystalline state.[3,4] Among these chalcogenides, the Ge2Sb2Te5 (GST) alloy has a high crystallization temperature and amorphous stability. Zn is a cheap and abundant metal in the earth It is compatible with the organism and necessary for the organism.[10] Ge is a common semiconductor, the Ge concentration is very low in minerals, so it is expensive.[11] Many other phase-change materials, such as WSbTe,[12] TiSbTe,[13] SiSbTe,[14] GaSbTe,[15] GeAsTe,[16] and AlGeSbTe,[17] featuring different phase-change characteristics compared with GST, have been researched by other research groups.
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