Abstract
A ruthenium(II) ή3-allylic complex Ru(nbd)(allyl)2 (nbd = norbornadiene) was used as precursor for pulse CVD thin Ru films on silicon substrates. Preliminary study of thermal behavior of precursor was carried out: temperature dependence of vapor pressure was measured by means of Knudsen method with mass spectrometric analysis of gas phase composition; thermodynamic parameters of sublimation process were calculated. By means of high temperature mass spectrometry in situ the process of vapor thermo destruction was investigated in vacuum: vapor decomposition starts at relatively low temperature (about 180оC); the major gas by-products are the radicals of ligands - allyl, norbornadiene and their combinations. Deposition of Ru films was carried out in vacuum and hydrogen. XPS, AFM and HREM study have shown metal state of Ru in films. In the presence of hydrogen the film consists of Ru particles with size of 3.5 nm. Sample surface is smooth; mean square roughness is 0.17 nm.
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