Abstract
contacts have been formed by different annealing processes using sputtered Pt. Two annealing sequences are compared: a single‐temperature one at 550°C and a three‐temperature one at 200°–300°–550°C. Three annealing ambients are compared for each sequence: forming gas, nitrogen, and oxygen. The process using the three‐temperature sequence in forming gas differs from all the others in that it allows a complete reaction between Pt and Si, leaving a thin passivating oxide layer with excellent protection against etching in aqua regia, a desirable step in device fabrication. films formed by all the other processes, on the other hand, show incomplete reactions between Pt and Si, with a thicker but very poor surface oxide layer which is completely etched off by aqua regia. Film structures and composition are analyzed, Schottky diodes fabricated from different processes are measured, and the results are discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
