Abstract
PtSi contact metallurgy has been formed using a wide series of annealing sequences, employing the three-temperature scheme developed earlier but with much shorter annealing durations. Using either 200-300-550 °C or 200-300-450 °C schemes and a total annealing time between 20 and 40 min in forming gas (N2-H2 9:1), all the films show complete reaction between Pt and Si, a necessary condition for high-quality PtSi contact used in devices as determined from earlier studies. The films also show surface passivating oxide layers of good resistance against etching in aqua regia. The results obtained make the three-temperature process a promising one for the fabrication of devices containing PtSi contact metallurgy.
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