Abstract
Graphene-based two-dimensional hybrid materials are attracting significant attention because they can preserve novel characteristics of Dirac cone. Here, based on first-principles methods, we focus on the electronic characteristics of PtSe2/graphene hetero-multilayer. The negative binding energies indicate that the hybrid materials can be fabricated easily in practice. Also, the n-type Schottky contact is formed and its barrier height is robust to the number of graphene layer. Moreover, the gate-voltage can effectively induce the Schottky barrier transformation from n-type to p-type and contact type transformation from Schottky to Ohmic in the PtSe2/graphene hetero-multilayer. Thus, the work demonstrates that the graphene stacking configuration and gate-voltage will tune the electronic characteristics of PtSe2/graphene-based nanodevices.
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