Abstract
As functional materials, PTC thermistor ceramics characterized by a drastic increase in resistivity at its transition temperature have been widely used in high-technology areas such as temperature measurement and indication, temperature control, protective switches and so on. At present, the PTC thermistors are fabricated by means of doping BaTiO_3 and their PTC effects result from the existence of acceptor state or electronic trap on grain boundary. But the fabrication process of
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