Pseudomorphic AlGaAs/InGaAs/GaAs HEMTs in low-cost plastic packaging for DBS application

Abstract

0.2 µm gate length pseudomorphic AlGaAs/InGaAs/GaAs HEMTs in low-cost plastic packaging have been manufactured in our laboratory. The PHEMTs show typical peak extrinsic transconductances of 390 – 430 mS/mm. From S-parameter measurements, the PHEMTs show typical current-gain cutoff frequencies of 65 – 72 GHz. The devices on-wafer exhibited 0.40 – 0.47 dB noise figure and 12.6 – 13.5 dB associated gain at 12 GHz, respectively. The authors report the first demonstration of devices in a plastic packaging with 1.0 – 1.2 dB noise figure and 9.5 – 9.9 dB associated gain. The volume production of high performance AlGaAs/InGaAs/GaAs PHEMTs in plastic packaging is suitable for direct-broadcast satellite applications.