Abstract
We demonstrate and evaluate proximity effect correction using blur map at a compromised focal plane in electron projection lithography. Critical dimension (CD) accuracy was improved from 12to5nm for 100nm L∕S pattern with 34% pattern area density by using blur maps calculated by space charge effect correction (SCEC) program, which is provided with the electron beam stepper NSR-EB1A by Nikon. CD error due to the SCEC was estimated to be 4nm, corresponding to 6nm in terms of blur for the resist process; this is substantiated by comparing the calculated and measured blurs that ranged from 6.3to−4.3nm.
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