Abstract
SOI monolithic active pixel sensors are novel ionizing radiation detectors that exploit both device and support layers of the SOI substrate for the integration of the pixel detector and readout electronics in one entity. The concept of such devices was validated in several iterations of production and tests of simple detectors test structures consisting of 64 readout channels. Following the positive results of the measurements of the test structures first large-scale and completely functional prototypes of SOI sensors were designed and manufactured. The paper presents the design aspects and preliminary tests results of the prototypes.
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