Proton emission cross sections of silicon isotopes

Abstract

Measurements of the electrodisintegration cross sections, (e,p) and (e,2p), and their corresponding electrodisintegration-plus-photodisintegration yields for $^{29}\mathrm{Si}$ and $^{30}\mathrm{Si}$ are presented. The experiment covers the range from 20 to 60 MeV electron incident energies. The experimental results were analyzed using E1 and E2 distorted-wave Born approximation virtual photon spectra for a finite nucleus in order to obtain the corresponding photodisintegration cross sections for both channels and isotopes. For $^{29}\mathrm{Si}$ the integrated (\ensuremath{\gamma},p) cross sections is 47% bigger than (\ensuremath{\gamma},n) while for $^{30}\mathrm{Si}$ they are of the same order of magnitude. For both isotopes the (\ensuremath{\gamma},p) decay channel is dominantly E1. The (\ensuremath{\gamma},2p) channel is much smaller than the (\ensuremath{\gamma},2n) channel but the E2 contribution to this decay mode is of the same magnitude of the E1.