Abstract
Travelling-wave parametric amplifiers of the band-pass type which use the diode bias capacitance as a bandsetting (tuning) element within the individual filter tanks are characterized by an inverse gain bandwidth relationship leading to reasonably high diode gains in narrow-band structures, but band-edge instabilities due to the image impedance poles cause a practical limitation of the gain. Structures employing the bias capacitance merely as a bandwidth controlling (coupling) element between adjacent tanks may be designed for a flat gain function without poles by proper matching of the corresponding unsymmetrical impedance functions, but the diode gain is rather modest (in the order of half the relative capacitance swing) and cannot be exchanged for filter bandwidth. The inverse gain bandwidth relationship and the flat gain response may be combined in non-planar structures where the diodes are incorporated into capacitive bridge networks. The gain per section of such an amplifier is half the midband gain of a corresponding amplifier of the first category on account of the additional bridge capacitances.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
