Abstract
In this study the effects of 1-Octadecanethiol (ODT, 1-CH3 [CH2]17SH) passivation on GaAs (100) surface and GaAs/Al2O3 MOS capacitors are investigated. The results measured by X-ray photoelectric spectroscopy (XPS), Raman spectroscopy and scan electron microscopy (SEM) show that the ODT passivation can obviously suppress the formation of As-O bonds and Ga-O bonds on the GaAs surface and produce good surface morphology at the same time, and especially provide better protection against environmental degradation for at least 24 h. The passivation time is optimized by photoluminescence (PL), and the maximum enhancement of PL intensity was 116%. Finally, electrical property of a lower leakage current was measured using the metal-oxide-semiconductor capacitor (MOSCAP) method. The results confirm the effectiveness of ODT passivation on GaAs (100) surface.
Highlights
Controlling the chemical and electronic properties of the III-V semiconductor surface/interface by a passivation method is a theme that has been studied extensively in the fields of semiconductor lasers [1,2], metal-oxide-semiconductor field effect transistors [3,4], and solar batteries [5] for several decades
Sulfur passivation, e.g., using CH3 CSNH2, (NH4 )2 S·9H2 O, S2 Cl and Na2 S [6,7,8] aqueous or organic solutions, have been reported widely due to their simplicity and effectiveness. They can reduce the GaAs surface state density by removing Ga-O/As-O bonds and saturate the dangling bonds with S-. This sulfur passivation has the prominent drawbacks of poor environmental stability, metal contamination, and H2 S volatilization, which are averse to further applications
It was clear that the longitudinal-optic-phonon-plasmon coupled (LOPC) peak was only slightly reduced compared with Figure 2b, we found that the degradation rate of ODT passivation in the N2 atmosphere was nearly zero in 24 h
Summary
Controlling the chemical and electronic properties of the III-V semiconductor surface/interface by a passivation method is a theme that has been studied extensively in the fields of semiconductor lasers [1,2], metal-oxide-semiconductor field effect transistors [3,4], and solar batteries [5] for several decades. Sulfur passivation, e.g., using CH3 CSNH2 , (NH4 ) S·9H2 O, S2 Cl and Na2 S [6,7,8] aqueous or organic solutions, have been reported widely due to their simplicity and effectiveness. They can reduce the GaAs surface state density by removing Ga-O/As-O bonds and saturate the dangling bonds with S-. This sulfur passivation has the prominent drawbacks of poor environmental stability, metal contamination, and H2 S volatilization, which are averse to further applications.
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