Abstract
The deposition of TiO2 films on InP substrate is studied by liquid phase deposition (LPD) with H2TiF6 and H3BO3 as the starting materials at the growth temperature of 75°C. The growth rate of TiO2 is about 42 Å/min. The surface morphology of the TiO2 films was mirror-like. The film stoichiometry was measured by energy dispersion spectroscopy (EDS). The refractive index of TiO2 films measured by ellipsometry reached 1.6. The structure of TiO2 is polycrystalline as determined by X-ray diffraction examination. From current–voltage measurement of the Al/TiO2/InP structure, the leakage current is 1×10-5 A/cm2 under the electric field intensity of 0.12 MV/cm.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
