Abstract
The deposition of TiO2 films on InP substrate is studied by liquid phase deposition (LPD) with H2TiF6 and H3BO3 as the starting materials at the growth temperature of 75°C. The growth rate of TiO2 is about 42 Å/min. The surface morphology of the TiO2 films was mirror-like. The film stoichiometry was measured by energy dispersion spectroscopy (EDS). The refractive index of TiO2 films measured by ellipsometry reached 1.6. The structure of TiO2 is polycrystalline as determined by X-ray diffraction examination. From current–voltage measurement of the Al/TiO2/InP structure, the leakage current is 1×10-5 A/cm2 under the electric field intensity of 0.12 MV/cm.
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